III-Nitride Emitters and Converters: Built-in polarization-induced electric fields, built-in potential, and effective doping concentration
The internal electric fields and the electro-optical response of nearly lattice-matched InGaN/GaN and InAlN/GaN heterostructures were experimentally quantified. Capacitance-Voltage (CV) measurements were performed on PIN diodes based on InGaN/GaN and InAlN/GaN quantum wells grown on (0001) sapphi...
| Κύριοι συγγραφείς: | , |
|---|---|
| Άλλοι συγγραφείς: | |
| Μορφή: | masterThesis |
| Γλώσσα: | English |
| Έκδοση: |
Εθνικό Μετσόβιο Πολυτεχνείο. Σχολή Χημικών Μηχανικών
2017
|
| Θέματα: | |
| Διαθέσιμο Online: | http://dspace.lib.ntua.gr/handle/123456789/46518 |